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Interactions entre défauts étendus et anomalies de diffusion des dopants dans le silicium : modèle physique et simulations prédictives
FR
| Auteur / Autrice : | Benjamin Colombeau |
| Direction : | Alain Claverie |
| Type : | Thèse de doctorat |
| Discipline(s) : | Matériaux, technologies et composants de l'électronique |
| Date : | Soutenance en 2001 |
| Etablissement(s) : | Toulouse 3 |