Thèse soutenue

FR
Accès à la thèse
Auteur / Autrice : Radek Lohonka
Direction : Jan KratochvilGuy Vanderschaeve
Type : Thèse de doctorat
Discipline(s) : Physique de la matière
Date : Soutenance en 2002
Etablissement(s) : Toulouse, INSA en cotutelle avec Univerzita Karlova v Praze, Matematicko Fyzikalni fakulta

Mots clés

FR

Résumé

FR  |  
EN

This thesis deals with the plastic behaviour of compound semiconductors in the low temperature--high stress regime. Compressive stress-strain curves are calculated with models based on the formalisms of Alexander-Haasen or Schoeck extended to include simple glide/multiglide and one/three types of perfect dislocations with different mobilities. The impossibility to describe the crystal plasticity below some temperature with the available dislocation velocities data suggests a change in the controlling microscopic mechanisms. The negative photoplastic effect in GaAs is simulated. Modelling the response of the crystal to Vickers indentation is performed using elastic analytical expressions for the stress tensor: the stress distribution can be considered as nearly spherical although the plastic zone is far from it. Early stages of the formation of the plastic zone are described with the continuum crystal plasticity theory implementing the constitutive laws into the finite element method.