Experimental and theoretical study of 3C-silicon carbide nanowire field effect transistors

par Konstantinos Rogdakis

Thèse de doctorat en Micro et nano-électronique

Sous la direction de Edwige Bano et de Panos Tzanetakis.

Soutenue en 2010

à Grenoble, INPG en cotutelle avec l'Université de Crète .


  • Résumé

    Recently, the growth and characterization of one-dimensional (1D) nanostructures (nanowires, nanorods, nanotubes) of wide-band-gap semiconductors have been extensively studied due to their potential for applications in nanoelectronics, sensors, batteries, and field emission displays (FEDs). The nanowire (NW) approach allows for a coaxial gate-dielectric channel geometry that is ideal for further downscaling and electrostatic control. Among the wideband-gap materials, 3C-SiC exhibits high values of thermal conductivity, breakdown electric field, electron drift velocity, Young’s modulus and hardness as well as excellent chemical and physical stability. Therefore, one dimensional 3C-SiC semiconductor nanowires, grown either with top-down or bottom-up techniques, are expected to generate a new family of high-performance nanowire devices as an add-on to mainstream Si technology. The thesis is divided into three main parts. In the first, we will present a theoretical study of 3C-SiC nanowire-based FETs (NWFETs) operating both in ballistic and dissipative transport regimes. More precisely, we will introduce numerical simulations of gate-all-around (GAA) 3C-SiC and Si NWFETs using a full quantum self-consistent Poisson-Schrödinger algorithm within the non equilibrium Green’s functions (NEGF) formalism. A direct comparison between Si and 3C-SiC device performances will shed some light on the different transport properties of the two materials. In the second part, the fabrication and the electrical characterization of 3C-SiC NWFETs will be presented. The last part of the talk will be devoted to the simulation of the electrical behaviour of the experimental NWFETs (both 3C-SiC and Si NWFETs) by using the Silvaco simulation tool. The accurate fitting of the experimental data, allows us to calculate the nanowire carrier concentration and mobility, and estimate the nanowire/dielectric interface quality as well as to study the effect of carrier concentration lowering, Schottky barriers height at contacts and the interface quality on device performance.


  • Résumé

    Recently, the growth and characterization of one-dimensional (10) nanostructures taanowires, nanorods, nanotubes) of wide-band-gap semiconductors have been extensively studied. . To their potential for applications in nanoelectronics, sensors, batteries, and field emission élisplays (FEDs). The nanowire (NW) approach allows for a coaxial gate-dielectric channel pmetry that is ideal for further downscaling and electrostatic control. Among the wide band-gap materials, 3C-SiC exhibits high values of thermal conductivity, breakdown electric field, electron drift velocity, Young's modulus and hardness as well as excellent chemical and physical stability. Therefore, 3C-SiC semiconductor nanowires, grown either with top-down or bottom-up techniques, Me expected to generate a new family of high-performance nanowire devices as an add-on to mainstream Si technology. This thesis is divided into three main parts. Ln the first chapter, an introduction to nanowire growth, properties and devices is presented. Our theoretical work follows in chapter two, where a study of 3C-SiC nanowire-based FETs (NWFETs) operating either in ballistic or in dissipative transport regime is indicated. More precisely, we introduce numerical simulations of gate-all-around (GAA) 3C-SiC and Si NWFETs using a full quantum self-consistent Poisson¬SchrOdinger algorithm within the non-equilibrium Green's functions (NEGF) formalism. A direct comparison between Si and 3C-SiC device performances sheds some light on the different transport properties of the two materials. Ln the third and forth chapter, the nanowire growth, the fabrication and the electrical characterization of 3C-SiC NWFETs is presented. The last part of the thesis is devoted to the simulation of the electrical behaviour of the experimental NWFETs (both 3C-SiC and Si NWFETs) by using the Silvaco simulation tool. The accurate fitting of the experimental data, allows us to calculate the nanowire carrier concentration and mobility, and estimate the nanowireldielectric interface quality as well as to study the effect of carrier concentration lowering, Schottky barriers height at contacts and the interface quality on the device's performance.

Consulter en bibliothèque

La version de soutenance existe sous forme papier

Informations

  • Détails : 1 vol. (143 p.)
  • Notes : Publication autorisée par le jury
  • Annexes : Bibliogr. 138 réf.

Où se trouve cette thèse ?

  • Bibliothèque : Service interétablissements de Documentation (Saint-Martin d'Hères, Isère). Bibliothèque universitaire de Sciences.
  • Disponible pour le PEB
  • Cote : TS10/INPG/0004/D
  • Bibliothèque : Service interétablissements de Documentation (Saint-Martin d'Hères, Isère). Bibliothèque universitaire de Sciences.
  • Disponible sous forme de reproduction pour le PEB
  • Cote : TS10/INPG/0004
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